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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage INC Collector- emitter voltage E SEM ANG H OND IC CONDITIONS TOR UC VALUE 45 35 5 1 1.5 UNIT V V V A A Emitter-base voltage Collector current Collector current-peak Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature -55 1.2 W 10 150 +150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC2582 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICEO Collector cut-off current VCE=20V; IB=0 100 |I A ICBO Collector cut-off current VCB=20V; IE=0 0.1 |I A IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE-1 DC current gain IC=500mA ; VCE=10V 85 hFE-2 COB IN DC current gain Output capacitance fT Transition frequency ANG CH S 170-340 MIC E SE IC=50mA ; VCE=10V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz OND 50 TOR UC 340 20 pF 200 MHz hFE-1 Classifications Q 85-170 R 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2582 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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